Tsuyoshi Ohtsuki
19Patents
1h-index
16Co-inventors
51Inventor score
Filing activity: Oct 16, 2000 → May 26, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8575722B2 | Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layer | Electricity | 2 | Active |
| US8043871B2 | Method for forming oxide film on silicon wafer | Electricity | 1 | Active |
| US8551246B2 | Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer | Emerging Cross-Sectional Technologies | 0 | Active |
| US12183641B2 | Method for evaluating semiconductor substrate | Electricity | 0 | Active |
| US12387126B2 | Method for producing semiconductor apparatus for quantum computer | Electricity | 0 | Active |
| US9780006B2 | Method for evaluating SOI substrate | Electricity | 0 | Active |
| US12308225B2 | Method for forming thermal oxide film on semiconductor substrate | Electricity | 0 | Active |
| US10886129B2 | Method for manufacturing semiconductor device and method for evaluating semiconductor device | Emerging Cross-Sectional Technologies | 0 | Active |
| US9748151B2 | Method for evaluating semiconductor substrate | Physics | 0 | Active |
| US12368107B2 | Method for producing semiconductor apparatus and semiconductor apparatus | Electricity | 0 | Active |
| US11824070B2 | Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor | Electricity | 0 | Active |
| US7633305B2 | Method for evaluating semiconductor wafer and apparatus for evaluating semiconductor wafer | Electricity | 0 | Expired |
| US7525327B2 | Apparatus for evaluating semiconductor wafer | Physics | 0 | Expired |
| US6541117B1 | Silicon epitaxial wafer and a method for producing it | Electricity | 0 | Expired |
| US9696368B2 | Semiconductor substrate evaluating method, semiconductor substrate for evaluation, and semiconductor device | Electricity | 0 | Active |
| US8900971B2 | Bonded substrate and manufacturing method thereof | Electricity | 0 | Active |
| US9935021B2 | Method for evaluating a semiconductor wafer | Electricity | 0 | Active |
| US11248306B2 | Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment | Chemistry; Metallurgy | 0 | Active |
| US8877609B2 | Method for manufacturing bonded substrate having an insulator layer in part of bonded substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.