Patent · US Active

Ferroelectric nonvolatile memory device and integration schemes

US11825663B2 · kind B2 · utility

0Cited by

2References

19Claims

0Family size

Assignee

GLOBALFOUNDRIES U.S. Inc. · US

Inventors

Johannes C. A. Muller · Eindhoven, NL
Thomas Melde · Dresden, DE
Stefan Dünkel · Dresden, DE
Ralf Richter · Dresden, DE

Key dates

Filing date	Aug 17, 2021
Grant date	Nov 21, 2023
Priority date	—
Expiry date	Jan 8, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10B53/10
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A nonvolatile memory device is provided, the device comprising a ferroelectric memory capacitor arranged over a first active region contact of a first transistor and a gate contact of a second transistor, whereby the ferroelectric memory capacitor at least partially overlaps a gate of the first transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.