Thomas Melde
8Patents
2h-index
18Co-inventors
44Inventor score
Filing activity: Apr 17, 2008 → Jun 14, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9842845B1 | Method of forming a semiconductor device structure and semiconductor device structure | Electricity | 9 | Active |
| US10079242B2 | Logic and flash field-effect transistors | Electricity | 2 | Active |
| US8258564B2 | Integrated circuit with floating-gate electrodes including a transition metal and corresponding manufacturing method | Electricity | 2 | Active |
| US11600628B2 | Floating gate memory cell and memory array structure | Electricity | 0 | Active |
| US12205633B2 | Non-volatile memory device with reference voltage circuit including column(s) of reference bit cells adjacent columns of memory bit cells within a memory cell array | Physics | 0 | Active |
| US11631772B2 | Non-volatile memory structure using semiconductor layer as floating gate and bulk semiconductor substrate as channel region | Electricity | 0 | Active |
| US11825663B2 | Ferroelectric nonvolatile memory device and integration schemes | Electricity | 0 | Active |
| US9898572B2 | Metal line layout based on line shifting | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.