Inventor · Dresden, DE

Thomas Melde

8Patents
2h-index
18Co-inventors
44Inventor score

Filing activity: Apr 17, 2008 → Jun 14, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9842845B1 Method of forming a semiconductor device structure and semiconductor device structure Electricity 9 Active
US10079242B2 Logic and flash field-effect transistors Electricity 2 Active
US8258564B2 Integrated circuit with floating-gate electrodes including a transition metal and corresponding manufacturing method Electricity 2 Active
US11600628B2 Floating gate memory cell and memory array structure Electricity 0 Active
US12205633B2 Non-volatile memory device with reference voltage circuit including column(s) of reference bit cells adjacent columns of memory bit cells within a memory cell array Physics 0 Active
US11631772B2 Non-volatile memory structure using semiconductor layer as floating gate and bulk semiconductor substrate as channel region Electricity 0 Active
US11825663B2 Ferroelectric nonvolatile memory device and integration schemes Electricity 0 Active
US9898572B2 Metal line layout based on line shifting Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.