Ralf Richter
127Patents
11h-index
128Co-inventors
83Inventor score
Filing activity: Jul 6, 1995 → Jul 26, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7550396B2 | Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device | Electricity | 489 | Active |
| US10033383B1 | Programmable logic elements and methods of operating the same | Electricity | 57 | Active |
| US6677015B2 | Molding composition with good capability for blow molding | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6355358B1 | Multilayer composite | Emerging Cross-Sectional Technologies | 29 | Expired |
| US8423940B2 | Early noise detection and noise aware routing in circuit design | Physics | 21 | Active |
| US9583640B1 | Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure | Electricity | 19 | Active |
| US6407182B1 | Free-flowing transparent polyamide molding composition | Chemistry; Metallurgy | 17 | Expired |
| US6391982B1 | Highly branched polyamide graft copolymers | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6538073B1 | Polyamide graft copolymers | Chemistry; Metallurgy | 15 | Expired |
| US7906383B2 | Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor device | Electricity | 13 | Active |
| US6726999B2 | Free flowing polyester molding composition | Emerging Cross-Sectional Technologies | 11 | Expired |
| US8815741B1 | Method of forming a semiconductor structure including an implantation of ions into a layer of spacer material | Electricity | 10 | Active |
| US8212184B2 | Cold temperature control in a semiconductor device | Electricity | 9 | Active |
| US7678690B2 | Semiconductor device comprising a contact structure with increased etch selectivity | Electricity | 9 | Active |
| US9842845B1 | Method of forming a semiconductor device structure and semiconductor device structure | Electricity | 9 | Active |
| US7964970B2 | Technique for enhancing transistor performance by transistor specific contact design | Electricity | 8 | Active |
| US9391176B2 | Multi-gate FETs having corrugated semiconductor stacks and method of forming the same | Electricity | 7 | Active |
| US7416973B2 | Method of increasing the etch selectivity in a contact structure of semiconductor devices | Electricity | 6 | Active |
| US7084300B2 | Work-up of residues in the preparation of carboxylic acids | Chemistry; Metallurgy | 6 | Expired |
| US8951907B2 | Semiconductor devices having through-contacts and related fabrication methods | Electricity | 6 | Active |
| US9012956B2 | Channel SiGe removal from PFET source/drain region for improved silicide formation in HKMG technologies without embedded SiGe | Electricity | 6 | Active |
| US8426312B2 | Method of reducing contamination by providing an etch stop layer at the substrate edge | Electricity | 5 | Active |
| US7611991B2 | Technique for increasing adhesion of metallization layers by providing dummy vias | Electricity | 5 | Active |
| US7704586B2 | Plastic molded bodies having two-dimensional and three-dimensional image structures produced through laser subsurface engraving | Emerging Cross-Sectional Technologies | 4 | Expired |
| US8367504B2 | Method for forming semiconductor fuses in a semiconductor device comprising metal gates | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.