Image sensing device
US11830893B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Dec 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/76
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.