Contact over active gate structures with metal oxide-caped contacts to inhibit shorting
US11837644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2019 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Mar 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Contact over active gate structures with metal oxide cap structures are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a metal oxide cap structure thereon. An interlayer dielectric material is over the plurality of gate structures and over the plurality of conductive trench contact structures. An opening is in the interlayer dielectric material and in a gate insulating layer of a corresponding one of the plurality of gate structures. A conductive via is in the opening, the conductive via in direct contact with the corresponding one of the plurality of gate structures, and the conductive via on a portion of one or more of the metal oxide cap structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.