Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiency
US11837683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2021 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | May 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium-and-nitrogen-containing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.