Lateral bipolar transistor
US11843034B2 · kind B2 · utility
0Cited by
13References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 17, 2021 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Nov 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes a lateral bipolar junction transistor including an extrinsic base region and a bilayer dielectric spacer on sidewalls of the extrinsic base region, and a p-n junction positioned under the bilayer dielectric spacer between the extrinsic base region and at least an emitter region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.