Bipolar transistor structure on semiconductor fin and methods to form same
US11843044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2022 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Jan 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
Embodiments of the disclosure provide a bipolar transistor structure on a semiconductor fin. The semiconductor fin may be on a substrate and may have a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. The semiconductor fin includes a first portion and a second portion adjacent the first portion along the length of the semiconductor fin. The second portion is coupled to a base contact. A dopant concentration of the first portion is less than a dopant concentration of the second portion. An emitter/collector (E/C) material is adjacent the first portion along the width of the semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.