Patent · US Active

Latent read disturb mitigation in memory devices

US11847335B2 · kind B2 · utility

0Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 25, 2021
Grant dateDec 19, 2023
Priority date
Expiry dateMar 25, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F3/0679
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A trigger condition associated with latent read disturb in a memory device is detected. In response to detecting the trigger condition associated with latent read disturb, one or more blocks in the memory device that are impacted by the trigger condition are placed in a stable state to mitigate latent read disturb in the one or more blocks.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.