Methods of and apparatus for magnetron sputtering
US11848179B2 · kind B2 · utility
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2References
31Claims
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Key dates
| Filing date | Sep 16, 2022 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Sep 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3452
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.