Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11848200B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | May 27, 2020 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Sep 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.