Patent · US Active

Method for recessing a fill material within openings formed on a patterned substrate

US11848236B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 20, 2021
Grant dateDec 19, 2023
Priority date
Expiry dateJul 13, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D88/01
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Process flows and methods are provided for recessing a fill material within openings formed within a patterned substrate. The openings are formed within a multilayer stack comprising a target material layer and one or more additional material layers, which overly and differ from the target material layer. After the openings are formed within the multilayer stack, a grafting material comprising a solubility-shifting agent is selectively deposited within the openings, such that the grafting material adheres to the target material layer without adhering to the additional material layer(s) overlying the target material layer. Next, a fill material is deposited within the openings and the solubility-shifting agent is activated to change the solubility of a portion of the fill material adjacent to and surrounding the grafting material. Then, a wet development process is used to remove the soluble/insoluble portions of fill material to the recess the fill material within the openings.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.