Patent · US Active

Composite wafer, semiconductor device and electronic component

US11848237B2 · kind B2 · utility

0Cited by

6References

10Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Paul Ganitzer · Villach, AT
Carsten von Koblinski · Velden am Wörther See, AT
Thomas Feil · Villach, AT
Gerald Lackner · Arnoldstein, AT
Jochen Mueller · Regensburg, DE
Martin Poelzl · Ossiach, AT
Tobias Polster · Villach, AT

Key dates

Filing date	Feb 23, 2022
Grant date	Dec 19, 2023
Priority date	—
Expiry date	Feb 23, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An electronic component includes a semiconductor device including a semiconductor die including a first surface, the first surface including a first metallization structure and edge regions surrounding the first metallization structure, a second surface opposing the first surface and including a second metallization structure, and side faces extending between the first surface and the second surface, wherein the edge regions of the first surface and portions of the side faces are covered by a first polymer layer, wherein the electronic component further includes a plurality of leads and a plastic housing composition, wherein the first metallization structure is coupled to a first lead and the second metallization structure is coupled to a second lead of the plurality of leads.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.