Polarization controlled transistor

US11848371B2 · kind B2 · utility

Assignee

• Xerox Corporation · US

Inventors

• Thomas Wunderer · Palo Alto, US
• JengPing Lu · San Jose, US
• Noble M. Johnson · Menlo Park, US

Key dates

• Filing date: Jul 2, 2020
• Grant date: Dec 19, 2023
• Expiry date: Nov 27, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/343

Abstract

A transistor includes a first layer comprising a group III-nitride semiconductor. A second layer comprising a group III-nitride semiconductor is disposed over the first layer. A third layer comprising a group III-nitride semiconductor is disposed over the second layer. An interface between the second layer and the third layer form a polarization heterojunction. A fourth layer comprising a group III-nitride semiconductor is disposed over the third layer. An interface between the third layer and the fourth layer forms a pn junction. A first electrical contact pad is disposed on the fourth layer. A second electrical contact pad is disposed on the third layer. A third electrical contact pad is electronically coupled to bias the polarization heterojunction.