Method of fabricating magneto-resistive random access memory (MRAM)
US11849644B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 15, 2021 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Jan 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.
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