Hybrid memory device using different types of capacitors
US11853552B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Oct 16, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2245
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The hybrid memory device may include volatile and non-volatile memory cells on a single substrate, or die. The non-volatile memory cells may have ferroelectric capacitors and the volatile memory cells may have paraelectric or linear dielectric capacitors for their respective logic storage components. In some examples, the volatile memory cells may be used as a cache for the non-volatile memory cells. Or the non-volatile memory cells may be used as a back-up for the volatile memory cells. By placing both types of cells on a single die, rather than separate dies, various performance metrics may be improved, including those related to power consumption and operation speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.