Word line zoned adaptive initial program voltage for non-volatile memory
US11854620B2 · kind B2 · utility
2Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Mar 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus is provided that includes a plurality of word lines that include a plurality of word line zones, a plurality of non-volatile memory cells coupled to the plurality of word lines, and a control circuit coupled to the non-volatile memory cells. The control circuit is configured to determine a corresponding initial program voltage for each of the word line zones. Each corresponding initial program voltage is determined based on a number of program erase cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.