Inventor · Saratoga, CA, US

Han-Ping Chen

30Patents
8h-index
25Co-inventors
75Inventor score

Filing activity: Dec 13, 1996 → Mar 13, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6358827B1 Method of forming a squared-off, vertically oriented polysilicon spacer gate Electricity 96 Expired
US6285624A Multilevel memory access method Physics 60 Expired
US7153744B2 Method of forming self-aligned poly for embedded flash Electricity 58 Expired
US6649489B1 Poly etching solution to improve silicon trench for low STI profile Electricity 21 Expired
US6828183B1 Process for high voltage oxide and select gate poly for split-gate flash memory Electricity 15 Expired
US6482700B2 Split gate field effect transistor (FET) device with enhanced electrode registration and method for fabrication thereof Electricity 10 Expired
US6569736B1 Method for fabricating square polysilicon spacers for a split gate flash memory device by multi-step polysilicon etch Electricity 9 Expired
US6222211A Memory package method and apparatus Electricity 8 Expired
US10922462B1 Intellectual property block validation and design integration for integrated circuits Physics 7 Active
US6781363B2 Memory sorting method and apparatus Emerging Cross-Sectional Technologies 7 Expired
US9318204B1 Non-volatile memory and method with adjusted timing for individual programming pulses Physics 5 Active
US5972775A Method of increasing thickness of field oxide layer Electricity 5 Expired
US10957394B1 NAND string pre-charge during programming by injecting holes via substrate Physics 4 Active
US11048837B2 Generation of dynamic design flows for integrated circuits Physics 3 Active
US6819593B2 Architecture to suppress bit-line leakage Physics 3 Expired
US6675319B2 Memory access and data control Physics 2 Expired
US11854620B2 Word line zoned adaptive initial program voltage for non-volatile memory Electricity 2 Active
US11139031B1 Neighbor word line compensation full sequence program scheme Physics 2 Active
US10541035B1 Read bias adjustment for compensating threshold voltage shift due to lateral charge movement Physics 2 Active
US10964402B1 Reprogramming memory cells to tighten threshold voltage distributions and improve data retention Electricity 2 Active
US10636501B1 Memory device with reduced neighbor word line interference using adjustable voltage on source-side unselected word line Physics 2 Active
US6125068A Memory access control Physics 1 Expired
US5731625A Bipolar variable resistance device Emerging Cross-Sectional Technologies 1 Expired
US11630930B2 Generation of dynamic design flows for integrated circuits Physics 1 Active
US6849499B2 Process for flash memory cell Electricity 1 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.