Semiconductor device and method
US11855017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Sep 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming under-bump metallurgy (UBM) structures having different surface profiles and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a first under-bump metallurgy (UBM) structure over and electrically coupled to the first redistribution line, the first UBM structure extending through the first passivation layer, a top surface of the first UBM structure being concave; and a second UBM structure over and electrically coupled to the second redistribution line, the second UBM structure extending through the first passivation layer, a top surface of the second UBM structure being flat or convex.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.