Substrate for a front-side-type image sensor and method for producing such a substrate
US11855120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2022 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Feb 18, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate for a front-side type image sensor includes a supporting semiconductor substrate, an electrically insulating layer, and a silicon-germanium semiconductor layer, known as the active layer. The electrically insulating layer includes a stack of dielectric and metallic layers selected such that the reflectivity of the stack in a wavelength range of between 700 nm and 3 μm is greater than the reflectivity of a silicon oxide layer having a thickness equal to that of the stack. The substrate also comprises a silicon layer between the electrically insulating layer and the silicon-germanium active layer. The disclosure also relates to a method for the production of such a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.