Vertical bipolar transistors

US11855197B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Shesh Mani Pandey · Saratoga Springs, US
• Alexander M. Derrickson · Troy, US
• Judson R. Holt · Wappingers Falls, US
• Vibhor Jain · Williston, US

Key dates

• Filing date: Jan 20, 2022
• Grant date: Dec 26, 2023
• Expiry date: Jan 20, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to vertical bipolar transistors and methods of manufacture. The structure includes: an intrinsic base region comprising semiconductor-on-insulator material; a collector region confined within an insulator layer beneath the semiconductor-on-insulator material; an emitter region above the intrinsic base region; and an extrinsic base region above the intrinsic base region.