Memory cell having programmable material comprising at least two regions comprising SiNx
US11856766B2 · kind B2 · utility
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30Claims
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Key dates
| Filing date | Aug 2, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Dec 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.