Method of forming silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET

US11856771B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Liang Yi · Singapore, SG
• Zhiguo Li · Hangzhou City, CN
• Chi Ren · Wenzhou, CN

Key dates

• Filing date: Jul 14, 2022
• Grant date: Dec 26, 2023
• Expiry date: Jul 14, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET includes a fin, a control gate and a selective metal gate. The fin is on a top surface of a substrate, wherein the fin has two sidewalls and a top surface, and the fin includes a memory region and a logic region. The control gate is disposed over the fin of the memory region and covers the two sidewalls and the top surface of the fin, wherein the control gate includes a charge trapping layer and a control electrode, wherein the charge trapping layer is sandwiched by the fin and the control electrode. The selective metal gate is disposed over the fin adjacent to the control gate and covers the two sidewalls and the top surface of the fin. The present invention also provides a method of forming said silicon-oxide-nitride-oxide-silicon (SONOS) memory cell.