Extreme ultraviolet mask absorber materials
US11860533B2 · kind B2 · utility
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17References
20Claims
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Key dates
| Filing date | Mar 23, 2021 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Jun 25, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.