Pellicle for an EUV lithography mask and a method of manufacturing thereof
US11860534B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2022 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Apr 19, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/64
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pellicle for an EUV photo mask includes a first layer; a second layer; and a main layer disposed between the first layer and second layer and including a plurality of nanotubes. At least one of the first layer or the second layer includes a two-dimensional material in which one or more two-dimensional layers are stacked. In one or more of the foregoing and following embodiments, the first layer includes a first two-dimensional material and the second layer includes a second two-dimensional material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.