System and methods using an inline surface engineering source
US11862433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2021 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Aug 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.