Semiconductor processing equipment including electrostatic chuck for plasma processing
US11862440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2021 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Mar 31, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32697
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor processing equipment and an electrostatic chuck include a semiconductor having: an upper electrode; a gas supplier connected to the upper electrode; and a substrate supporting structure spaced apart from the upper electrode to define a processing volume. The substrate supporting structure supports a substrate and includes: a lower electrode having a side area disposed outside a step formed at an outer perimeter portion of the lower electrode and a processing area disposed inside the step; a first plate disposed on the lower electrode; an attraction electrode disposed on the first plate; and a second plate disposed on the attraction plate. The second plate supports the substrate in a state in which the substrate is laid on an upper surface of the second plate. Each of the first plate and the second plate includes ceramic. The lower electrode has a maximum height at a central portion of the processing area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.