Lateral bipolar transistor structure with superlattice layer and method to form same

US11862717B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Vibhor Jain · Williston, US
• John J. Pekarik · Underhill, US
• Alvin J. Joseph · Williston, US
• Alexander M. Derrickson · Troy, US
• Judson R. Holt · Wappingers Falls, US

Key dates

• Filing date: Nov 24, 2021
• Grant date: Jan 2, 2024
• Expiry date: Feb 11, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8161

Abstract

Embodiments of the disclosure provide a lateral bipolar transistor structure with a superlattice layer and methods to form the same. The bipolar transistor structure may have a semiconductor layer of a first single crystal semiconductor material over an insulator layer. The semiconductor layer includes an intrinsic base region having a first doping type. An emitter/collector (E/C) region may be adjacent the intrinsic base region and may have a second doping type opposite the first doping type. A superlattice layer is on the E/C region of the semiconductor layer. A raised E/C terminal, including a single crystal semiconductor material, is on the superlattice layer. The superlattice layer separates the E/C region from the raised E/C terminal.