Magnetoresistive random access memory
US11864468B2 · kind B2 · utility
1Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Jun 16, 2021 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Mar 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.