Methods for producing a single crystal silicon ingot using a vaporized dopant
US11866844B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2020 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Jul 25, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for doping a single crystal silicon ingot pulled includes heating a vaporization cup. The method also includes maintaining a pressure of an interior of the housing at a first pressure. The method further includes injecting liquid dopant into the dopant injection tube and the vaporization cup. A pressure of the liquid dopant is maintained at a second pressure greater than the first pressure prior to injection into the dopant injection tube and the vaporization cup. The method also includes vaporizing the liquid dopant into vaporized dopant within the housing. The liquid dopant is vaporized by flash evaporation by heating the liquid dopant with the vaporization cup and reducing the pressure of the liquid dopant from the second pressure to the first pressure by injecting the liquid dopant into the housing. The method further includes channeling the vaporized dopant into the housing using the dopant injection tube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.