Nanowire transistor structure and method of shaping
US11869973B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2018 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Oct 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.