Semiconductor device and method of making
US11869991B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2021 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Oct 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/147
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device is provided. The semiconductor device includes a waveguide over a first dielectric layer. A first portion of the waveguide has a first width and a second portion of the waveguide has a second width larger than the first width. The semiconductor device includes a first doped semiconductor structure and a second doped semiconductor structure. The second portion of the waveguide is between the first doped semiconductor structure and the second doped semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.