Method for forming storage node contact structure and semiconductor structure
US11871562B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2021 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Mar 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02609
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a storage node contact structure and semiconductor structure are provided. The method includes providing a substrate having a surface on which bit line structures are formed; forming a groove at a part, corresponding to an active region, of bottom of the contact hole; and growing a silicon crystal from the groove in the contact hole by using an epitaxial growth process, and controlling growth rates of the silicon crystal in a first and second directions in a growth process to enable the growth rate of the silicon crystal in the first direction to be greater than the growth rate of the silicon crystal in the second direction at beginning of growth and enable the growth rate of the silicon crystal in the first direction to be equal to the growth rate of the silicon crystal in the second direction at end of the growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.