Lingguo Zhang
9Patents
0h-index
8Co-inventors
27Inventor score
Filing activity: Sep 15, 2020 → Dec 7, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11856758B2 | Method for manufacturing memory and same | Electricity | 0 | Active |
| US12178036B2 | Method for forming memory and memory | Electricity | 0 | Active |
| US12127397B2 | Memory device and method for forming the same | Electricity | 0 | Active |
| US11985815B2 | Method for manufacturing memory and same | Electricity | 0 | Active |
| US11974427B2 | Manufacturing method of a memory and a memory | Electricity | 0 | Active |
| US12419041B2 | Method for forming storage node contact structure and semiconductor structure | Electricity | 0 | Active |
| US12342535B2 | Memory forming method and memory | Electricity | 0 | Active |
| US12127398B2 | Method for manufacturing memory using pseudo bit line structures and sacrificial layers | Electricity | 0 | Active |
| US11871562B2 | Method for forming storage node contact structure and semiconductor structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.