Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

US11871566B2 · kind B2 · utility

Inventors

• Collin Howder · Boise, US
• Chet E. Carter · Boise, US

Key dates

• Filing date: Feb 1, 2022
• Grant date: Jan 9, 2024
• Expiry date: Apr 4, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/27

Abstract

A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers above a substrate. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Catalytic material is formed in a bottom region of individual of the trenches. Metal material is electrolessly deposited onto a catalytic surface of the catalytic material to individually fill at least a majority of remaining volume of the individual trenches. Channel-material strings are formed and extend through the first tiers and the second tiers. Other embodiments, including structure independent of method, are disclosed.