Method for preparing semiconductor device with wire bond
US11876072B2 · kind B2 · utility
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2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2021 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Jun 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.