Semiconductor device and method of manufacturing the same
US11876077B2 · kind B2 · utility
0Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2021 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Mar 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1436
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a fusion-bonding interface is formed between the first device wafer and the second device wafer, wherein the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.