Structure and method of mirror grounding in LCoS devices
US11880052B2 · kind B2 · utility
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13References
6Claims
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Key dates
| Filing date | Nov 20, 2020 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Nov 20, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/307
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Processing methods may be performed to form a grounded mirror structure on a semiconductor substrate. The methods may include revealing a metal layer. The metal layer may underlie a spacer layer. The metal layer may be revealed by a dry etch process. The method may include forming a mirror layer overlying the spacer layer and the metal layer. The mirror layer may contact the metal layer. The method may also include forming an oxide inclusion overlying a portion of the mirror layer. The portion of the mirror layer may be external to the spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.