Semiconductor image sensor device
US11881493B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2022 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Nov 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor device includes a transistor disposed in a pixel region; a salicide block layer covering the pixel region; a first ILD layer covering the salicide block layer; a second ILD layer on the first ILD layer; a source contacts extending through the second and first ILD layers and the salicide block layer, and including first polysilicon plug in the first ILD layer and first conductive metal layer on the first polysilicon plug; and a drain contact extending through the second and first ILD layers and the salicide block, and including second polysilicon plug in the first ILD layer and second conductive metal layer on the second polysilicon plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.