Gate structures with air gap isolation features
US11881506B2 · kind B2 · utility
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23References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 2021 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Apr 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The structure includes: a gate structure comprising a horizontal portion and a substantially vertical stem portion; and an air gap surrounding the substantially vertical stem portion and having a curved surface under the horizontal portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.