Patent · US Active

Method of manufacturing semiconductor device with silicon carbide body

US11881512B2 · kind B2 · utility

0Cited by

11References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ralf Siemieniec · Villach, AT
Thomas Aichinger · Faak am See, AT
Romain Esteve · Munich, DE
Ravi Keshav Joshi · Klagenfurt, AT
Shiqin Niu · Freising, DE

Key dates

Filing date	Nov 4, 2021
Grant date	Jan 23, 2024
Priority date	—
Expiry date	Nov 4, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/405
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method includes providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench, and forming a gate electrode in the gate trench, the gate electrode including a metal structure and a semiconductor layer between the metal structure and the gate dielectric.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.