Semiconductor device and method of fabricating the same
US11881529B2 · kind B2 · utility
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12References
8Claims
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Key dates
| Filing date | Sep 5, 2022 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Sep 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is provided. First, a semiconductor structure is provided, and the semiconductor structure includes a buried dielectric layer, a first gate structure disposed on a front-side of the buried dielectric layer, and a first source/drain region and a second source/drain region disposed between the buried dielectric layer and the first gate structure. Then, a trench is formed in the buried dielectric layer. Afterwards, a conductive layer is formed on the buried dielectric layer and in the trench. Finally, the conductive layer is patterned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.