Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FINFET and forming method thereof
US11882699B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2021 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Apr 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET includes a fin, a control gate and a selective metal gate. The fin is on a top surface of a substrate, wherein the fin has two sidewalls and a top surface, and the fin includes a memory region and a logic region. The control gate is disposed over the fin of the memory region and covers the two sidewalls and the top surface of the fin, wherein the control gate includes a charge trapping layer and a control electrode, wherein the charge trapping layer is sandwiched by the fin and the control electrode. The selective metal gate is disposed over the fin adjacent to the control gate and covers the two sidewalls and the top surface of the fin. The present invention also provides a method of forming said silicon-oxide-nitride-oxide-silicon (SONOS) memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.