Method of estimating convection pattern of silicon melt, method of estimating oxygen concentration of silicon single crystal, method of manufacturing silicon single crystal, and raising device of silicon single crystal
US11885038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2019 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Jan 27, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B30/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.