Plasma processing system and method using radio frequency (RF) and microwave power
US11887815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2021 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Feb 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one example, a plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface disposed inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes a microwave source coupled to a microwave oscillator, and a conductive spatial uniformity component including a plurality of through openings, where the conductive spatial uniformity component includes a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.