Enhanced spatial ALD of metals through controlled precursor mixing
US11887856B2 · kind B2 · utility
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12References
17Claims
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Key dates
| Filing date | Jun 14, 2021 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Aug 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.