Image sensor formed in sequential 3D technology
US11888007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2020 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Jun 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An image sensor including a plurality of pixels, each pixel including a photodetector coupled to a control circuit, the photodetector being formed inside and on top of a first semiconductor substrate, and the control circuit including at least one first MOS transistor formed inside and on top of a second semiconductor substrate arranged on the first substrate, the sensor being intended to be illuminated on the side of the surface of the first substrate opposite to the second substrate, the sensor further comprising a shield arranged between the first and second substrates and extending over substantially the entire surface of the sensor, said shield including at least one electrically-conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.