Integrated dipole flow for transistor

US11888045B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Yongjing Lin · San Jose, US
• Karla M Bernal Ramos · San Jose, US
• Luping Li · Cixi City, CN
• Shih Chung Chen · Hsinchu, TW
• Jacqueline S. Wrench · San Jose, US
• Yixiong Yang · San Jose, US
• Steven C. H. Hung · Sunnyvale, US
• Srinivas Gandikota · Santa Clara, US
• Naomi Yoshida · Sunnyvale, US
• Lin Dong · Sunnyvale, US

Key dates

• Filing date: Dec 21, 2021
• Grant date: Jan 30, 2024
• Expiry date: Jan 21, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/667

Abstract

Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).