Lateral bipolar transistor structure with inner and outer spacers and methods to form same

US11888050B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• John L. Lemon · Selkirk, US
• Alexander M. Derrickson · Troy, US
• Haiting Wang · Clifton Park, US
• Judson R. Holt · Wappingers Falls, US

Key dates

• Filing date: Dec 2, 2021
• Grant date: Jan 30, 2024
• Expiry date: Mar 5, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/137

Abstract

Embodiments of the disclosure provide a lateral bipolar transistor structure with inner and outer spacers, and related methods. A lateral bipolar transistor structure may have an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A first base layer is on the insulator and adjacent the E/C layer. The first base layer has a second doping type opposite the first doping type. A second base layer is on the first base layer and having the second doping type. A dopant concentration of the second base layer is greater than a dopant concentration of the first base layer. An inner spacer is on the E/C layer and adjacent the second base layer. An outer spacer is on the E/C layer and adjacent the inner spacer.